TK150E09NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H)
TK150E09NE
E-Bike
Low drain−sour...
TK150E09NE
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (U−MOSⅧ-H)
TK150E09NE
E-Bike
Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)
Low leakage current
: IDSS = 10 μA (max) (VDS = 85 V)
Enhancement mode
: Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA)
10.2±0.3
Φ3.7±0.1 A
2.74 6.51
Unit: mm
1.27±0.1
8.59±0.2 15.1±0.8
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage Gate−source voltage
Drain current
DC (Tc = 25°C) (Note 1)
DC (Tc = 100°C) (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
(Note 2)
Peak diode recovery dv/dt (Note 5)
Channel temperature
Storage temperature range
Thermal Characteristics
Symbol
VDSS VGSS
ID
ID IDP PD EAS IAS dv/dt Tch Tstg
Rating 85 ±20 150
120 450 230 161 72 12 175 −55~175
Unit V
A
W mJ A V/ns °C
Characteristics
Symbol
Max Unit
Thermal resistance, channel to cas...
