Document
WNM3013
Small Signal N-Channel, 30V, 0.10A, MOSFET
WNM3013
Http://www.willsemi.com
Descriptions
The WNM3013 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM3013 is Pb-free.
SOT-723
D 3
Features
z Trench N-Channel z Supper high density cell design for extremely low
Rds(on) z Exceptional ON resistance and maximum DC
current capability z Small package design with SOT-723
12 GS
Pin Configuration
3
KN
12
KN = Device Code
Applications
Marking
z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potable device
Order Information
Device
Package
WNM3013-3/TR SOT-723
Shipping 8000/Tape&Reel
Will Semiconductor Ltd. 1 Nov, 2011 - Rev. 1.0
Absolute Maximum ratings
Symbol Parameter
VDSS
Drain-to-Source Voltage
VGSS
Gate-to-Source Voltage
ID Drain Curr.