WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
WNM3003
Http://www.willsemi.com
V(BR)DSS 30V
Rds(on) ()
0.033@ 10V 0.033@...
WNM3003
N-Channel, 30V, 4.0A, Power MOSFET
WNM3003
Http://www.willsemi.com
V(BR)DSS 30V
Rds(on) ()
0.033@ 10V 0.033@ 10V 0.043 @ 4.5V
Descriptions
The WNM3003 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM3003 is Pb-free.
Features
SOT-23 D 3
12 GS Configuration (Top View)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23
WT3*
WT3 *
= Device Code = Month (A~Z) Marking
Applications
z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging
Order Information
Device
Package
WNM3003-3/TR SOT-23
Shipping 3000/Tape&Reel
Will Semiconductor Ltd.
1 Dec,2011 - Rev.1.1
Absolute Maximum ratings
Parameter Drain-Source...
