WNM12N65/WNM12N65F 650V N-Channel MOSFET
Description
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect Tr...
WNM12N65/WNM12N65F 650V N-Channel MOSFET
Description
The WNM12N65/WNM12N65F is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced high voltage MOSFET Process and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in popular AC-DC applications, power switching application and a wide variety of other applications.
WNM12N65/WNM12N65F
Features
650V@TJ=25°C Typ.RDS(on)=0.57Ω Low gate charge 100% avalanche tested 100% Rg tested
D
GDS
TOT-O22- 0
12N65
12N65F
G S
GD S
TO-220F
WNM12N65 =Devices code
Y Y =Year WW =Week
WNM12N65 F =Devices code
Y Y =Year WW =Week
Order Information
Device
Package
WNM12N65_3/T
TO-220
WNM12N65F_3/T TO-220-F
Units/Tube 50 50
Absolution Maximum Ratings TA=25oC unless otherwise noted
Parameter
Symbol WNM12N65
WNM12N65F
Drain-Source Voltage Gate-Source Voltage
TC=25°C Continuous Drain Current
TC=100°C Pulsed Drain Current Single Pulsed Avalanche Energy C
VDS 650 VGS ±...