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CBSL6

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° ...


Advanced Semiconductor

CBSL6

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Description
CBSL6 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL6 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E .125 G H I L F C B 2XØ.130 FEATURES: Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 2.4 A DIM MINIMUM inches / mm J K MAXIMUM inches / mm 50 V 35 V 3.5 V 53 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 3.3 OC/W O O A B C D E F G H I J K L .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 ORDER CODE: ASI10580 CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICEO ICBO hFE COB PG ηC IC = 5 mA IC = 5 mA IE = 5 mA VCE = 24 V VCB = 24 V VCE = 10 V VCB = 24 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 24 50 3.5 1.0 1.0 UNITS V V V mA mA --pF dB % IC = 0.1 A f = 1.0 MHz ICQ = 25 mA f = 960 MHz 20 100 8.5 VCC = 24 V POUT = 6.0 W 10 50 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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