CBSL30B

CBSL30B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL30B is Designed for PACKAGE STYLE .250 BAL FLG .020 x 45° B A Ø.130 NOM. .050 x 45° E D C N FEATURES: Omnigold™ Metalization System F H I J G MAXIMUM RATINGS IC VCBO VCES VEBO PDISS TJ TSTG θ JC 5.0 A 48 V 45 V 4.0 V 43 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 3.0 OC/W O O O DIM A B C D E F G H I J K L M N .245 / 6.22 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 1.91 .243 / 6.17 .630 / 16.00 .092 / 2.34 .055 / 1.40 .125 / 3.18 MINIMUM inches / mm L K M MAXIMUM inches / mm .060 / 1.52 .065 / 1.65 .255 / 6.48 .670 / 17.01 .565 / 14.35 .750 / 19.05 .327 / 8.31 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .257 / 6.53 ORDER CODE: ASI10583 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE COB PG IC = 50 mA IC = 20 mA IE = 5 mA VCB = 24 V TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 48 25 3.5 50 30 4.0 ------1.0 100 25 7.5 UNITS V V V mA --pF dB VCE = 5.0 V VCB = 24 V VCC = 24 V POUT = 30 W IC = 100 mA f = 1.0 MHz ICQ = 2 X 75 mA f = 960 MHz 20 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...