CBSL30

CBSL30 DESCRIPTION: NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R C B 2XØ.130 .115 .430 D E .125 G H I J K L F The ASI CBSL30 is Designed for FEATURES: Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 7.5 A 48V 25 V 3.5 V 88 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 3.0 OC/W O DIM A B C D E F G H I J K L MINIMUM inches / mm MAXIMUM inches / mm .355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84 .365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 / 9.27 .006 / 0.15 .130 / 3.30 .180 / 4.57 .260 / 6.60 O O O O ORDER CODE: ASI10582 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO ICBO hFE COB PG IMD3 VSWR1 VSWR2 OVD TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 40 mA IC = 40 mA IE = 10 mA VCE = 24 V VCE = 20 V VCB = 25 V VCE = 25 V POUT = 30 W ICQ = 150 mA f1 = 860.0 MHz IC = 2.0 A f = 1.0 MHz f = 860 MHz f2 = 860.1 MHz RBE = 150 Ω MINIMUM TYPICAL MAXIMUM 48 30 25 3.5 10 15 55 40 28 5.0 --40 ----------100 50 7.5 -35 No Degradation in Output Device No Degradation in Output Device No Degradation in Output Device --- UNITS V V V mA --pF dB dBc Typ. Typ. Typ. VCE = 25 V VCE = 25 V ± 20% VCE = 25 V ± 20% PIN = PIN (norm) +3 dB VCE = 25 V VCE = 25 V ± 20% VSWR = 20:1 VSWR = 10:1 VSWR = 5:1 PIN (norm) = +5 Db PIN (norm) = +3 dB A D V A N C E D S E M I C O ...