P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
...
P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
‐30V
D
RDSON (MAX.)
7.8mΩ
ID
‐26A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage Continuous Drain Current
TC = 25 °C TA = 25 °C
VGS ID
Pulsed Drain Current1
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐26A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
IDM IAS EAS EAR
PD
Tj, Tstg
EMB07P03V
LIMITS ±25 ‐26 ‐15 ‐19 ‐100 ‐26 33.8 16.9 2.5 1
‐55 to 150
UNIT V A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL...
