EMB03P03H
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX....
EMB03P03H
P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
D
BVDSS
‐30V
RDSON (MAX.)
3.1mΩ
ID
‐85A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C
‐85
ID
TC = 100 °C
‐65
IDM
‐260
Avalanche Current
IAS
‐80
Avalanche Energy
L = 0.1mH, ID=‐80A, RG=25Ω
EAS
320
Repetitive Avalanche Energy2
L = 0.05mH
EAR
160
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
69 27 ‐55 to 150
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐50A, Rated VDS=‐30V P‐CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction‐to‐Case
RJC
1.8
Junction‐to‐Ambient3
RJA
62.5
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
UNIT V A
mJ W °C
UNIT °C / W
2016/3/9 p.1
EMB03P03H
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐24V, ...