EMB03P03H

EMB03P03H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐30V RDSON (MAX.) 3.1mΩ ID ‐85A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C ‐85 ID TC = 100 °C ‐65 IDM ‐260 Avalanche Current IAS ‐80 Avalanche Energy L = 0.1mH, ID=‐80A, RG=25Ω EAS 320 Repetitive Avalanche Energy2 L = 0.05mH EAR 160 Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 69 27 ‐55 to 150 100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐50A, Rated VDS=‐30V P‐CH THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction‐to‐Case RJC 1.8 Junction‐to‐Ambient3 RJA 62.5 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ UNIT V A mJ W °C UNIT °C / W 2016/3/9 p.1 EMB03P03H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = ‐250A VDS = VGS, ID = ‐250A VDS = 0V, VGS = ±20V VDS = ‐24V, ...