P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
8....
P‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
‐30V
RDSON (MAX.)
8.5mΩ
ID ‐70A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ESD Protection
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMZB08P03H
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=‐50A, RG=25Ω
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS PD
Tj, Tstg
±20 ‐70 ‐50 ‐150 ‐50 125 50 20 ‐55 to 150
V A
mJ W °C
100% UIS testing in condition of VD=‐15V, L=0.1mH, VG=‐10V, IL=‐40A, Rated VDS=‐30V P‐CH THERMAL RESISTANCE RATINGS
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