N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
...
N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
50mΩ
ID 2.2A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS ID IDM PD Tj, Tstg
TYPICAL
Junction‐to‐Ambient
RJA
Junction‐to‐Lead
RJL
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
2013/3/15
EMF50N03M
LIMITS ±12 2.2 1.65 14 0.29 0.19
‐55 to 150
UNIT V
A
W °C
MAXIMUM 425 320...