SQM60030E

www.vishay.com SQM60030E Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES TrenchFET® power MOSFET Package with low thermal resistance AEC-Q101 qualified d 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package 80 0.0032 120 Single TO-263 G N-Channel MOSFET S ORDERING INFORMATION Lead (Pb)-free and halogen-free SQM60030E_GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current a TC = 25 °C TC = 125 °C ID Continuous source current (diode conduction) a IS Pulsed drain current b IDM Single pulse avalanche current Single pulse avalanche Energy L = 0.1 mH IAS EAS Maximum power dissipation b TC = 25 °C TC = 125 °C PD Operating junction and storage temperature range TJ, Tstg LIMIT 80 ± 20 120 120 120 250 70 245 375 125 -55 to +175 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. Parametric verification ongoing PCB mount c SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT °C/W S18-0555-Rev. B, 04-Jun-2018 1 Document Number: 67284 For technical questions, contact: automostechsupport@vis...