SQJQ100E

www.vishay.com SQJQ100E Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET PowerPAK® 8 x 8L Single 1 Top View 8.1 mm D 1 2G 3S 4S S Bottom View FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Thin 1.9 mm height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 8 mm PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration Package 40 0.0015 200 Single PowerPAK 8 x 8L G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C a TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS ...