SQJA96EP

www.vishay.com SQJA96EP Vishay Siliconix Automotive N-Channel 80 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Single 6.15 mm 1 Top View 5.13 mm D 1 2S 3S 4S G Bottom View FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) per leg Configuration Package 80 0.0215 30 Single PowerPAK SO-8L G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode conduction) a Pulsed Drain Current b TC = 25 °C a TC = 125 °C VGS ID IS IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Pe...