SQJ570EP

www.vishay.com SQJ570EP Vishay Siliconix Automotive N- and P-Channel 100 V (D-S) 175 °C MOSFET PowerPAK® SO-8L Dual 6.15 mm 1 Top View 5.13 mm D1 D2 1 2 S1 3 G1 4 S2 G2 Bottom View PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID (A) Configuration 100 -100 0.0450 0.1460 0.0580 0.2065 15 -9.5 N- and p-pair FEATURES TrenchFET® power MOSFET AEC-Q101 qualified 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 S2 G2 G1 S1 N-Channel MOSFET D2 P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8L SQJ570EP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-source voltage Gate-source voltage Continuous drain current Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche Energy Maximum power dissipation b Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 100 -100 ± 20 15 a -9.5 9.6 -5.5 15 -15 40 -21 13 -6 8.4 1.8 27 27 9 9 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drai...