RB088NS150
Schottky Barrier Diode
●Outline
VR 150 V
Io 10 A
IFSM 50 A
...
RB088NS150
Schottky Barrier Diode
●Outline
VR 150 V
Io 10 A
IFSM 50 A
●Features High reliability Power mold type Cathode common dual type Super Low IR
●Inner Circuit
Data sheet
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
RB088NS150
●Absolute Maximum Ratings (Tj=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
150 V
Reverse voltage Average rectified forward current Peak forward surge current Junction temperature
VR Reverse direct voltage
150 V
Io IFSM
60Hz half sin waveform,resistive load, Io/2 per diode,Tc=141℃Max.
60Hz half sin waveform, non-repetitive,per diode,Ta=25℃
10 50
A A
Tj -
150 ℃
Storage temperature
Tstg -
-55 ~ 150
℃
Attention
www.rohm.com © 2018- ROHMCo., Ltd.All rights reserved.
1/6 2019/05/27_Rev.003
RB088NS150
Data sheet
●Electrical Characteristics Parameter
Forward voltage(1) Reverse current(1)
Note (1) Value per diode
(Tj=25ºC unless otherwise specified)
Symbol
Conditions
VF IF=5A
IR VR=150V
Min. Typ. Max. Unit - 0.78 0.88 V - - 15 μA
●Thermal Characteristics
Parameter
Symbol Min. Typ. Max. ...