N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
...
N‐Channel Logic Level Enhancement Mode Field Effect
Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 1.1A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS ID IDM PD Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1%
2012/8/15
EMDJ0N20Q
LIMITS ±30 1.1 0.7 4.4 6.25 2.5
‐55 to 150
UNIT V
A
W °C...