Document
MIMTSITUSBUIBSIHSIHLISLISsIs
MM55MM444422656C5J,CTPJ-5,T,-6P,-7-,5-5,S-6,-6,S-7,-7,S -5S,-6S,-7S
EDOED(HOY(PHEYRPEPRAGPAEGMEOMDOE)D4E1)9441390443-B04IT-B(I2T62(2164241-W44O-WRODRBDYB1Y6-B16IT-B) IDTY) NDAYMNAICMRICAMRAM
DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application.
This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
FEATURES
Type name
M5M44265CXX-5,-5S M5M44265CXX-6.