1M-Bit CMOS Static RAM
1997-1/21 MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(13107...
Description
1997-1/21 MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD).Two types of devices are available. VP,KV(normal lead bend type package),RV,KR(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
FEATURES
Type name
M5M51008BFP,VP,RV,KV,KR-70VL M5M51008BFP,VP,RV,KV,KR-10VL M5M51008BFP,VP,RV,KV,KR-12...
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