MITSUBISHI LSIs
M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCR...
MITSUBISHI LSIs
M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film
transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal for the battery back-up application.
The M5M51008CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. M5M51008CVP,KV(normal lead bend type package), M5M51008CRV,KR(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.
FEATURES Type name
M5M51008CP,FP,VP,RV,KV,KR-55H M5M51008CP,FP,VP,RV,KV,KR-70H M5M51008CP...