M5M42S6S-20

MITSUBISHI LSls MSM42S6S-12, -15, -20 262 144-BIT (262 144-WORD BY 1-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, lOiN power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation. Multiplexed address inputs permit both a reduction in pins to the standard 16-pin package configuration and an increase in system densities. In addition to the RAS only refresh mode, the Hidden refresh mode and CAS before RAS refresh mode are available. FEATURES Type name Access time (max) (ns) Cycle time (min) (ns) Power dissipation (typ) (mW) M5M4256S-12 120 230 260 M5M4256S-15 1...