Silan Microelectronics
SVS7N65F/D/MJ_Datasheet
7A, 650V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS7N65F/D/MJ is ...
Silan Microelectronics
SVS7N65F/D/MJ_Datasheet
7A, 650V DP MOS POWER
TRANSISTOR
GENERAL DESCRIPTION
SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
2
1 3
1.Gate 2.Drain 3.Source
1 3
TO-252-2L
FEATURES
7A, 650V, RDS(on)(typ)=0.66Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No. SVS7N65F SVS7N65D SVS7N65DTR SVS7N65MJ
Package TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L
Marking SVS7N65F SVS7N65D SVS7N65D SVS7N65MJ
Material Halogen free ...