Silan Microelectronics
SVS4N80D/T_Datasheet
4A, 800V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS4N80D is an N-channel enh...
Silan Microelectronics
SVS4N80D/T_Datasheet
4A, 800V DP MOS POWER
TRANSISTOR
DESCRIPTION
SVS4N80D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
2
1 3
1.Gate 2.Drain 3.Source
FEATURES
4A,800V, RDS(on)(typ.)=1.1Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
123
TO-220-3L
TO-252-2L
ORDERING INFORMATION
Part No. SVS4N80D SVS4N80DTR SVS4N80T
Package TO-252-2L TO-252-2L TO-220-3L
Marking SVS4N80D SVS4N80D SVS4N80T
Material Halogen free Halogen free Halogen free
Packing Tube
Tape & Reel Tube
ABSOLUTE MA...