Silan Microelectronics
SVS11N65T/F/K_Datasheet
11A, 650V DP MOS POWER TRANSISTOR
DESCRIPTION
SVS11N65T/F/K is an N-ch...
Silan Microelectronics
SVS11N65T/F/K_Datasheet
11A, 650V DP MOS POWER
TRANSISTOR
DESCRIPTION
SVS11N65T/F/K is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
2
11
23
3 TO-262-3L 1.Gate 2.Drain 3.Source
FEATURES
11A,650V, RDS(on)(typ.)=0.37Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability
1 23
TO-220F-3L
1 23
TO-220-3L
ORDERING INFORMATION
Part No. SVS11N65T SVS11N65F SVS11N65K
Package TO-220-3L TO-220F-3L TO-262-3L
Marking SVS11N65T SVS11N65F SVS11N65K
Material Halogen free Halogen free Halogen free
Packi...