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Silan Microelectronics
SVS4N65F/MJ/D_Datasheet
4A, 650V DP MOS POWER TRANSISTOR
GENERAL DESCRIPTION
SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.
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1 3
1.Gate 2.Drain 3.Source
1 3
TO-252-2L
FEATURES
4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated High peak current capability
123
TO-220F-3L
123
TO-251J-3L
ORDERING INFORMATION
Part No. SVS4N65F SVS4N65MJ SVS4N65D SVS4N65DTR
Package TO-220F-3L TO-251J-3L TO-252-2L TO-252-2L
Marking SVS4N65F SVS4N65MJ SVS4N65D SVS4N65D
Material Halogen free Halogen free Halogen free Hal.