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SVS4N65F

Silan Microelectronics
Part Number SVS4N65F
Manufacturer Silan Microelectronics
Description TRANSISTOR
Published Apr 21, 2017
Detailed Description Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS4N65F/MJ/D is ...
Datasheet PDF File SVS4N65F PDF File

SVS4N65F
SVS4N65F

Overview
Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, i.
e.
, suitable for hard and soft switching topologies.
2 1 3 1.
Gate 2.
Drain 3.
Source 1 3 TO-252-2L FEATURES  4A, 650V, RDS(on)(typ)=0.
95Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Extreme dv/dt rated...


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