SVF9NE80F_Datasheet
9A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF9NE80F is an N-channel enhancement mode power MOS f...
SVF9NE80F_Datasheet
9A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF9NE80F is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 9A,800V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF9NE80F
Package TO-220F-3L
Marking SVF9NE80F
Material Pb free
Packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.3
2011.11.23 Page 1 of 5
SVF9NE80F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise n...