SVF6N60D

SVF6N60MJ/F/D_Datasheet 6A 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N60MJ/F/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 6A,600V,RDS(on(typ)=1.35Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF6N60MJ SVF6N60F SVF6N60D SVF6N60DTR Package TO-251J-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVF6N60MJ SVF6N60F SVF6N60D SVF6N60D Material Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel HANGZHOU SILAN MICROELECTRONICS CO...