SVF4N80F/D/MJ/K_Datasheet
4A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N80F/D/MJ/K is an N-channel enhancement mode...
SVF4N80F/D/MJ/K_Datasheet
4A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
4A,800V, RDS(on)(typ.)=3.3@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N80F SVF4N80D SVF4N80DTR SVF4N80MJ SVF4N80K
Package
TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L TO-262-3L
Marking
SVF4N80F SVF4N80D SVF4N80D SVF4N80MJ SVF4N80K
Hazardous substance control
Pb free Halogen free Halogen free Halogen free
Pb free
Packing
Tube Tube Tape&Reel Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.2 Page 1 of 11
SVF4N80F/D/MJ/K_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25C TC=100C
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID IDM PD EAS TJ Tstg
SVF4N...