SVF7N80T/F/KL_Datasheet
7A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N80T/F/KL is an N-channel enhancement mode po...
SVF7N80T/F/KL_Datasheet
7A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
7A,800V,RDS(on)(typ.)=1.39@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
2
1 3
1.Gate 2.Drain 3.Source
123 TO-220F-3L
123 TO-262L-3L
123 TO-220-3L
Silan VDMOS Code of F-Cell process
Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A
N denotes N Channel
ORDERING INFORMATION
Part No.
SVF7N80T SVF7N80F SVF7N80KL
Package
TO-220-3L TO-220F-3L TO-262L-3L
Package information. Example:T:TO-220;
F:TO-220F;KL:TO-262L.
Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V.
Special Features indication, May be omitted. Example: E denotes embeded ESD structure
Marking
SVF7N80T SVF7N80F SVF7N80KL
Hazardous Substance Control
Pb free Pb free Pb free
Packing
Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 1 of 10
SVF7N80T/F/KL_Datasheet
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