Document
SVF7N80T/F/KL_Datasheet
7A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
7A,800V,RDS(on)(typ.)=1.39@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
2
1 3
1.Gate 2.Drain 3.Source
123 TO-220F-3L
123 TO-262L-3L
123 TO-220-3L
Silan VDMOS Code of F-Cell process
Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A
N denotes N Channel
ORDERING INFORMATION
Part No.
SVF7N80T SVF7N80F SVF7N80KL
Package
TO-220-3L TO-220F-3L TO-262L-3L
Package information. Example:T:TO-220;
F:TO-220F;KL:TO-262L.
Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V.
Special Features indication, May be omitted. Example: E denotes embeded ESD structure
Marking
SVF7N80T SVF7N80F SVF7N80KL
Hazardous Substance Control
Pb free Pb free Pb free
Packing
Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 1 of 10
SVF7N80T/F/KL_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25C TC=100C
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID IDM
PD
EAS TJ Tstg
SVF7N80T
154 1.23
Ratings SVF7N80F
800 ±30 7.0 4.4 28.0 50 0.40 534 -55~+150 -55~+150
SVF7N80KL
150 1.20
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RθJC RθJA
SVF7N80T 0.81 62.5
Ratings SVF7N80F
2.50 62.5
SVF7N80KL 0.83 62.5
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Symbol BVDSS
IDSS IGSS VGS(th)
Test conditions VGS=0V, ID=250µA VDS=800V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss Coss Crss td(on)
tr td(off)
tf Qg Qgs Qgd
VDS=25V, VGS=0V, f=1.0MHz
VDD=400V, RG=25 , ID=7.0A
(Note 2,3)
VDS=640V, ID=7.0A,
VGS=10V
(Note 2,3)
Min. 800 --2.0
--
------------
Typ. -----
1.4
1087 104 5.7 34 72 63 35 23 7.0 9.0
Max. -1.0
±100 4.0
1.6
---
----------
Unit V V A A W
W/C mJ C C
Unit C/W C/W
Unit V µA nA V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 2 of 10
SVF7N80T/F/KL_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current Pulsed Source Current Diode Forward Voltage
IS Integral Reverse P-N Junction ISM Diode in the MOSFET VSD IS=7.0A,VGS=0V
Reverse Recovery Time Reverse Recovery Charge
Trr IS=7.0A,VGS=0V, Qrr dIF/dt=100A/µS
(Note2)
Notes:
1. L=30mH, IAS=5.50A, VDD=100V, RG=20, starting TBJB=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min. ------
Typ. ----
590 3.9
Max. 7.0 28 1.4 ---
Unit
A
V ns µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 3 of 10
TYPICAL CHARACTERISTICS
SVF7N80T/F/KL_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 4 of 10
TYPICAL CHARACTERISTICS(continued)
SVF7N80T/F/KL_Datasheet
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 5 of 10
TYPICAL TEST CIRCUIT
SVF7N80T/F/KL_Datasheet
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS trtd(on) ton
td(off)
tf
toff
RG 10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS IAS
EAS =
1 2
LIAS2
BVDSS BVDSS - VDD
DUT
VDD
VDD
ID(t) tp
VDS(t) Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6 Page 6 of 10
PACKAGE OUTLINE
TO-220-3L
TO-220F-3L
SVF7N80T/F/KL_Datasheet
UNIT: mm
4.30 1.00 1.80 0.60 1.00 0.30 15.10 8.10 9.60
6.10 12.60
3.40 2.60
4.50 1.30 2.40 0.80
15.70 9.20 9.90
2.54BSC 6.50 13.08
3.70
4.70 1.50 2.80 1.00 1.60
0.70 16.10 10.00 10.4.