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SVF7N80F Dataheets PDF



Part Number SVF7N80F
Manufacturers Silan Microelectronics
Logo Silan Microelectronics
Description 800V N-CHANNEL MOSFET
Datasheet SVF7N80F DatasheetSVF7N80F Datasheet (PDF)

SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power .

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SVF7N80T/F/KL_Datasheet 7A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N80T/F/KL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A,800V,RDS(on)(typ.)=1.39@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220F-3L 123 TO-262L-3L 123 TO-220-3L Silan VDMOS Code of F-Cell process Nominal current,using 1 or 2 digits: Example:4 denotes 4A, 10 denotes 10A, 08 denotes 0.8A N denotes N Channel ORDERING INFORMATION Part No. SVF7N80T SVF7N80F SVF7N80KL Package TO-220-3L TO-220F-3L TO-262L-3L Package information. Example:T:TO-220; F:TO-220F;KL:TO-262L. Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V. Special Features indication, May be omitted. Example: E denotes embeded ESD structure Marking SVF7N80T SVF7N80F SVF7N80KL Hazardous Substance Control Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 1 of 10 SVF7N80T/F/KL_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg SVF7N80T 154 1.23 Ratings SVF7N80F 800 ±30 7.0 4.4 28.0 50 0.40 534 -55~+150 -55~+150 SVF7N80KL 150 1.20 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RθJC RθJA SVF7N80T 0.81 62.5 Ratings SVF7N80F 2.50 62.5 SVF7N80KL 0.83 62.5 ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) Test conditions VGS=0V, ID=250µA VDS=800V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA RDS(on) VGS=10V, ID=3.5A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=25V, VGS=0V, f=1.0MHz VDD=400V, RG=25 , ID=7.0A (Note 2,3) VDS=640V, ID=7.0A, VGS=10V (Note 2,3) Min. 800 --2.0 -- ------------ Typ. ----- 1.4 1087 104 5.7 34 72 63 35 23 7.0 9.0 Max. -1.0 ±100 4.0 1.6 --- ---------- Unit V V A A W W/C mJ C C Unit C/W C/W Unit V µA nA V  pF ns nC HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 2 of 10 SVF7N80T/F/KL_Datasheet SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristics Symbol Test conditions Continuous Source Current Pulsed Source Current Diode Forward Voltage IS Integral Reverse P-N Junction ISM Diode in the MOSFET VSD IS=7.0A,VGS=0V Reverse Recovery Time Reverse Recovery Charge Trr IS=7.0A,VGS=0V, Qrr dIF/dt=100A/µS (Note2) Notes: 1. L=30mH, IAS=5.50A, VDD=100V, RG=20, starting TBJB=25C; 2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Min. ------ Typ. ---- 590 3.9 Max. 7.0 28 1.4 --- Unit A V ns µC HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 3 of 10 TYPICAL CHARACTERISTICS SVF7N80T/F/KL_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 4 of 10 TYPICAL CHARACTERISTICS(continued) SVF7N80T/F/KL_Datasheet HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 5 of 10 TYPICAL TEST CIRCUIT SVF7N80T/F/KL_Datasheet Gate Charge Test Circuit & Waveform Same Type VGS 50KΩ as DUT 10V VDS 12V 200nF 300nF Qg Qgs Qgd VGS DUT 3mA Charge 10V VDS VGS RG Resistive Switching Test Circuit & Waveform RL DUT VDD VDS 90% 10% VGS trtd(on) ton td(off) tf toff RG 10V tp Unclamped Inductive Switching Test Circuit & Waveform VDS ID L BVDSS IAS EAS = 1 2 LIAS2 BVDSS BVDSS - VDD DUT VDD VDD ID(t) tp VDS(t) Time HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.6 Page 6 of 10 PACKAGE OUTLINE TO-220-3L TO-220F-3L SVF7N80T/F/KL_Datasheet UNIT: mm 4.30 1.00 1.80 0.60 1.00 0.30 15.10 8.10 9.60 6.10 12.60 3.40 2.60 4.50 1.30 2.40 0.80 15.70 9.20 9.90 2.54BSC 6.50 13.08 3.70 4.70 1.50 2.80 1.00 1.60 0.70 16.10 10.00 10.4.


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