SVD8N80T/F_Datasheet
8A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N80T/F is an N-channel enhancement mode power MOS...
SVD8N80T/F_Datasheet
8A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD8N80T/F is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ 8A,800V,RDS(on)(typ)=1.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No. SVD8N80T SVD8N80F
Package TO-220-3L TO-220F-3L
Marking SVD8N80T SVD8N80F
Material Pb free Pb free
Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.20 Page 1 of 8
SVD8N80T/F_Datasheet
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