SVF4N90F_Datasheet
4A, 900V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N90F is an N-channel enhancement mode power MOS fie...
SVF4N90F_Datasheet
4A, 900V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N90F is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 4A,900V,RDS(on)(typ.)=2.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF4N90F
Package TO-220F-3L
Marking SVF4N90F
Material Pb free
Packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV: 1.1
2012.12.17 Page 1 of 7
Silan Microelectronics
SVF4N90F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=2...