DatasheetsPDF.com

SVF2N65CF

Silan Microelectronics

650V N-CHANNEL MOSFET

SVF2N65CF/M/MJ/D/NF_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65CF/M/MJ/D/NF is an N-channel enhancem...


Silan Microelectronics

SVF2N65CF

File Download Download SVF2N65CF Datasheet


Description
SVF2N65CF/M/MJ/D/NF_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65CF/M/MJ/D/NF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  2A,650V, RDS(on)(typ.)=4.3@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF2N65CF SVF2N65CM SVF2N65CMJ SVF2N65CD SVF2N65CDTR SVF2N65CNF Package TO-220F-3L TO-251D-3L TO-251J-3L TO-252-2L TO-252-2L TO-126F-3L Marking SVF2N65CF SVF2N65C SVF2N65C SVF2N65CD SVF2N65CD SVF2N65CNF Hazardous Substance Control Halogen free Halogen free Halogen free Halogen free Halogen free Pb free Packing Tube Tube Tube Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.6 Page 1 of 10 SVF2N65CF/M/MJ/D/NF_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25C TC=100C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Te...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)