SVF2N65CF/M/MJ/D/NF_Datasheet
2A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N65CF/M/MJ/D/NF is an N-channel enhancem...
SVF2N65CF/M/MJ/D/NF_Datasheet
2A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N65CF/M/MJ/D/NF is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
2A,650V, RDS(on)(typ.)=4.3@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF2N65CF SVF2N65CM SVF2N65CMJ SVF2N65CD SVF2N65CDTR SVF2N65CNF
Package
TO-220F-3L TO-251D-3L TO-251J-3L TO-252-2L TO-252-2L TO-126F-3L
Marking
SVF2N65CF SVF2N65C SVF2N65C SVF2N65CD SVF2N65CD SVF2N65CNF
Hazardous Substance Control
Halogen free Halogen free Halogen free Halogen free Halogen free
Pb free
Packing
Tube Tube Tube Tube Tape & Reel Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6 Page 1 of 10
SVF2N65CF/M/MJ/D/NF_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25C TC=100C
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Te...