SVD640D

SVD640T/D/F_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure middle/low-voltage VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. Package SVD640T SVD640D SVD640DTR SVD640F TO-220-3L TO-252-2L TO-252-2L TO-220F-3L Marking SVD640T SVD640D SVD640D SVD640F Material Pb free Halogen free Halogen free Pb free Packing Tube Tube Tape & Reel Tube ABSOLUTE MAXIMUM RATING...