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SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 110A,55V,RDS(on)(typ)=6.4mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVD3205T
Package TO-220-3L
Marking SVD3205T
Material Pb free
Packing Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:0.1
2012.03.07 Page 1 of 4
SVD3205T_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise not.