SVD3410D/M/T_Datasheet
17A, 100V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3410D/M/T is an N-channel enhancement mode hig...
SVD3410D/M/T_Datasheet
17A, 100V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect
transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It is widely used in vehicle voltage
regulator etc.
FEATURES
17A,100V,RDS(on)(typ.)=68m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No. SVD3410D SVD3410DTR SVD3410M SVD3410T
Package TO-252-2L TO-252-2L TO-251D-3L TO-220-3L
Marking SVD3410D SVD3410D SVD3410M SVD3410T
Material Halogen free Halogen free Halogen free
Pb free
Packing Tube
Tape & Reel Tube Tube
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C TC=100°C
Drain Current Pulsed
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
ID
IDM
PD
EAS TJ Tstg
Rating
SVD3410D/M
SVD3410T
100
±16
17
12
60
83 100
0.66 0.80
150
-55~+175 -55~+175
Unit
V V
A
A W W/C mJ C C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.5 Page 1 of 8
SVD3410D/M/T_Datasheet
THE...