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SW180N06A Dataheets PDF



Part Number SW180N06A
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW180N06A DatasheetSW180N06A Datasheet (PDF)

SAMWIN SW180N06A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max5.0mΩ)@VGS=10V ■ Gate Charge (Typical 133nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics..

  SW180N06A   SW180N06A


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SAMWIN SW180N06A N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max5.0mΩ)@VGS=10V ■ Gate Charge (Typical 133nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 60V ID : 180A RDS(ON) :5.0mΩ 2 1 3 Order Codes Item 1 Sales Type SW P 180N06 Marking SW180N06A Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Volt.


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