SW226NV

SAMWIN SW226NV Features IPAK DPAK ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typical 34nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 2 13 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel MOSFET BVDSS : 600V ID : 4.0A RDS(ON) : 2.5ohm 2 1 3 Order Codes Item 1 2 Sales Type SW I 226NV SW D 226NV Marking SW226NV SW226NV Package IPAK DPAK Packaging TUBE REEL Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Ga...