MOSFET
SAMWIN
SW1N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Impr...
Description
SAMWIN
SW1N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 12 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-251
TO-252
TO-126
12 3
12 3
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
BVDSS : 600V ID : 1.0A RDS(ON) : 12ohm
2
1
3
Order Codes
Item 1 2 3
Sales Type SW L 1N60 SW I 1N60 SW D 1N60
Marking SW1N60 SW1N60 SW1N60
Package TO-126 TO-251 TO-252
Packaging TUBE TUBE REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ
TL
Drain to Source Voltage
Continuous Drain Current (@TC=25oC) Continuous Drain ...
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