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ADVANCED LINEAR DEVICES, INC.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY
QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR
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EPAD ® ENAB
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ALD210802
VGS(th)= +0.20V
GENERAL DESCRIPTION
The ALD210802 precision enhancement mode N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These quad monolithic devices are enhanced additions to the ALD110802 EPAD® MOSFET Family, with increased forward transconductance and output conductance, particularly at very low supply voltages.
Intended for low voltage, low power small signal applications, the ALD210802 features precision threshold voltage, which enables circuit designs with input/ output signals referenced to GND at enhanced operating voltage ranges. With these devices, a circuit with multiple cascading stages can be built to operate at extremely low supply/bias voltage levels. For example, a nanopower input amplifier stage operating at less than 0.2V supply voltage has been suc.