LN100

Supertex inc. LN100 1200V Cascoded N-Channel MOSFET Features ►► 1200V breakdown voltage ►► Low threshold, 1.6V max. ►► High input impedance ►► Low input capacitance ►► Integrated high voltage resistor divider ►► Integrated 1000:1 resistor divider ►► Compact 3x3 LFGA package Applications ►► High voltage shunt regulator ►► High voltage linear amplifier ►► High voltage digital pulsers ►► High voltage sensing circuit General Description The LN100 is a 1200V cascoded N-channel MOSFET with an integrated high value high voltage resistor divider. Multiple devices can be used in series for voltages greater than 1200V. A resistor divider ratio of 1000:1 is provided. High value resistors are used to minimize power consumption. The maximum Gate-to-Source threshold voltage is 1.6V. This allows the Gate to be controlled by low voltage circuitry. The LN100 can be used as a high voltage low power pulser. It can also be used in a high voltage low current ...