2W High Linearity and High Efficiency GaAs Power FETs
Description
TC1601
REV4_20060510
2W High Linearity and High Efficiency GaAs Power FETs
FEATURES
! 2W Typical Power at 6 GHz
PHOTO ENLARGEMENT
! Linear Power Gain: GL = 12 dB Typical at 6 GHz
! High Linearity: IP3 = 43 dBm Typical at 6 GHz
! Via Holes Source Ground
! Suitable for High Reliability Application
! Breakdown Voltage: BVDGO ≥ 15 V
! Lg = 0.35 µm, Wg ...
