GA50JT17-CAL

Die Datasheet GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode VDS = 1700 V RDS(ON) = 20 mΩ ID @ 25 oC = 100 A hFE = 85 Die Size = 4.35 mm x 4.35 mm Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Applications  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid Electric Vehicles (HEV)  Solar Inverters  Switched-Mode Power Supply (SMPS)  Power Factor Correction (PFC)  Induction Heating  Uninterruptible Power Supply (UPS)  M...