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2N7635-GA

GeneSiC
Part Number 2N7635-GA
Manufacturer GeneSiC
Description Junction Transistor
Published Apr 14, 2017
Detailed Description 2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Electrica...
Datasheet PDF File 2N7635-GA PDF File

2N7635-GA
2N7635-GA

Overview
2N7635-GA Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Electrically Isolated Base Plate  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Package  RoHS Compliant VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 425 mΩ 10 A 110 D G S TO – 257 (Isolated Base-plate Hermetic Package) Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses ...


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