HCD80R650E Super Junction MOSFET
March 2017
HCD80R650E
800V N-Channel Super Junction MOSFET
Features
Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
Key Parameters
Parameter BVDSS @Tj,max
ID RDS(on), max
Qg, Typ
Value 850 8 0.65 12
Unit V A Ω nC
Application
Switch Mode Power S...
