HFP5N65F

HFP5N65F_HFS5N65F Oct 2016 HFP5N65F / HFS5N65F 650V N-Channel MOSFET Features ‰ Originative New Design ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 650 5 2 12.5 HFP5N65F TO-220 HFS5N65F TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 5.0 5.0 * 3.2 3.2 * 20 20 * ρ30 110 5.0 12.5 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 125 42 1.0 0.32 TJ, TSTG TL Operating and Storage Temperature Rang...