N-Channel MOSFET
HFB1N65S
Dec 2012
HFB1N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A
FEATURES
Originativ...
Description
HFB1N65S
Dec 2012
HFB1N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ ȍ ID = 0.3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 0.3 0.18 1.2 ρ30 33 0.3 0.3 4.5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ଇ) Power Di...
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