N-Channel MOSFET
HCP20NT60V
Apr 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A
FEA...
Description
HCP20NT60V
Apr 2014
HCP20NT60V
600V N-Channel Super Junction MOSFET
BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 54 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.17 ȍ7\S#9GS=10V 100% Avalanche Tested RoHS Compliant
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600 20 12.5 60 ρ30 500 10 1 4.5
PD
Power Dissipation (TC = 25...
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